View CY7C192-12VC_4110648.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CY7C192
64K x 4 Static RAM with Separate I/O
Features
* High speed -- 12 ns * CMOS for optimum speed/power * Low active power -- 860 mW * Low standby power -- 55 mW * TTL-compatible inputs and outputs * Automatic power-down when deselected * Available in non Pb-free 28-Lead Molded SOJ package.
Functional Description
The CY7C192 is a high-performance CMOS static RAM organized as 65,536 x 4 bits with separate I/O. Easy memory expansion is provided by active LOW Chip Enable (CE) and tri-state drivers. It has an automatic power-down feature, reducing the power consumption by 75% when deselected. Writing to the device is accomplished when the Chip Enable (CE) and write enable (WE) inputs are both LOW. Data on the four input pins (I0 through I3) is written into the memory location specified on the address pins (A0 through A15). Reading the device is accomplished by taking the Chip Enable (CE) LOW while the Write Enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the four data output pins. The output pins stay in high-impedance state when Write Enable (WE) is LOW, or Chip Enable (CE) is HIGH. A die coat is used to insure alpha immunity.
Logic Block Diagram
I0 I1 I2 I3
INPUT BUFFER
Pin Configurations
SOJ Top View
A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 I0 I1 CE GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A5 A4 A3 A2 A1 A0 I3 I2 O3 O2 O1 O0 WE
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9
ROW DECODER
O0
SENSE AMPS 64K x 4 ARRAY
O1 O2 O3
COLUMN DECODER
POWER DOWN
A10 A11 A12 A13 A14 A15
CE
WE
Selection Guide
Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current -12 12 155 10 -15 15 145 10 Unit ns mA mA
Cypress Semiconductor Corporation Document #: 38-05047 Rev. *C
*
198 Champion Court
*
San Jose, CA 95134-1709 * 408-943-2600 Revised August 3, 2006
[+] Feedback
CY7C192
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ..................................... -65C to +150C Ambient Temperature with Power Applied.................................................. -55C to +125C Supply Voltage to Ground Potential .................-0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] ........................................ -0.5V to VCC + 0.5V DC Input Voltage[1].................................... -0.5V to VCC + 0.5V Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage............................................. >900V (per MIL-STD-883, Method 3015) Latch-Up Current .................................................... >200 mA
Operating Range
Range Commercial Ambient Temperature[2] 0C to +70C VCC 5V 10%
Electrical Characteristics Over the Operating Range
-12 Parameter VOH VOL VIH VIL IIX IOZ ICC ISB1 ISB2 Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[1] Input Leakage Current Output Leakage Current VCC Operating Supply Current GND < VI < VCC GND < VO < VCC, Output Disabled VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Test Conditions VCC = Min., IOH = -4.0 mA VCC = Min., IOL = 8.0 mA 2.2 -0.5 -5 -5 Min. 2.4 0.4 VCC + 0.3V 0.8 +5 +5 155 30 10 2.2 -0.5 -5 -5 Max. Min. 2.4 0.4 VCC + 0.3V 0.8 +5 +5 145 30 10 -15 Max. Unit V V V V A A mA mA mA
Automatic CE Power-Down Max. VCC, CE > VIH, VIN > VIH or Current--TTL Inputs VIN < VIL, f = fMAX Automatic CE Power-Down Max. VCC, CE > VCC - 0.3V, Current--CMOS Inputs VIN > VCC - 0.3V or VIN < 0.3V, f = 0
Capacitance[3]
Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 5.0V Max. 8 10 Unit pF pF
AC Test Loads and Waveforms[4]
5V OUTPUT 30 pF INCLUDING JIG AND SCOPE R2 255 R1 481 5V OUTPUT 5 pF INCLUDING JIG AND SCOPE R2 255 R1 481 ALL INPUT PULSES 3.0V GND 10% < tr Equivalent to: THEVENIN EQUIVALENT 167 OUTPUT 1.73V 90% 90% 10% < tr
(a)
(b)
Notes: 1. Minimum voltage is equal to -2.0V for pulse durations of less than 20 ns. 2. TA is the case temperature. 3. Tested initially and after any design or process changes that may affect these parameters. 4. tr = < 3 ns for the -12 and -15 speeds. tr = < 5 ns for the -20 and slower speeds.
Document #: 38-05047 Rev. *C
Page 2 of 8
[+] Feedback
CY7C192
Switching Characteristics Over the Operating Range[5]
-12 Parameter Read Cycle tRC tAA tOHA tACE tLZCE tHZCE tPU tPD Write tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE Cycle[8] Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z[6] WE LOW to High Z[6,7] 12 9 9 0 0 8 8 0 3 7 15 10 10 0 0 9 9 0 3 7 ns ns ns ns ns ns ns ns ns ns Read Cycle Time Address to Data Valid Output Hold from Address Change CE LOW to Data Valid CE LOW to Low Z
[6] [6,7]
-15 Max. Min. 15 12 15 3 12 15 3 5 7 0 12 15 Max. Unit ns ns ns ns ns ns ns ns
Description
Min. 12 3 3 0
CE HIGH to High Z
CE LOW to Power-Up CE HIGH to Power-Down
Notes: 5. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZW\E is less than tLZWE for any given device. These parameters are guaranteed by design and not 100% tested. 7. tHZCE and tHZWE are specified with CL = 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
Document #: 38-05047 Rev. *C
Page 3 of 8
[+] Feedback
CY7C192
Switching Waveforms
Read Cycle No. 1[9, 10]
tRC ADDRESS tOHA DATA OUT PREVIOUS DATA VALID tAA DATA VALID
Read Cycle No. 2[9, 11]
tRC
CE
tACE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tPU 50%
tHZCE DATA VALID tPD
HIGH IMPEDANCE
DATA OUT
ICC 50% ISB
Write Cycle No. 1 (WE Controlled)[8]
tWC ADDRESS tSCE CE tSA WE tSD DATA IN DATA VALID tHZWE DATA OUT DATA UNDEFINED tLZWE HIGH IMPEDANCE tHD tAW tPWE tHA
Notes: 9. WE is HIGH for read cycle. 10. Device is continuously selected, CE = VIL. 11. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05047 Rev. *C
Page 4 of 8
[+] Feedback
CY7C192
Switching Waveforms (continued)
Write Cycle No. 2 (CE Controlled)[8, 12]
tWC ADDRESS tSA CE tAW tPWE WE tSD DATA IN tHZWE DATA OUT HIGH IMPEDANCE DATA VALID tHD tHA tSCE
Note: 12. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
Document #: 38-05047 Rev. *C
Page 5 of 8
[+] Feedback
CY7C192
Typical DC and AC Characteristics
OUTPUT SOURCE CURRENT (mA) NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.4
SB
NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE 1.4
SB
OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE 120 100 80 60 40 20 0 0.0 1.0 2.0 3.0 4.0 VCC =5.0V TA =25C
1.2 1.0 0.8 0.6 0.4 0.2 0.0 4.0 ISB 4.5 5.0 5.5 6.0 VIN =5.0V TA =25C ICC
ICC
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -55 ISB 25 125 VCC =5.0V VIN =5.0V
NORMALIZED ICC
NORMALIZED ICC
SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE 1.4 NORMALIZED tAA NORMALIZED tAA 1.3 1.2 1.1 TA =25C 1.0 0.9 0.8 4.0 4.5 5.0 5.5 6.0 1.6 1.4 1.2 1.0
AMBIENT TEMPERATURE(C) NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE
OUTPUT VOLTAGE (V) OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE 140 120 100 80 60 40 20 0 0.0 1.0 2.0 3.0 4.0 VCC =5.0V TA =25C
VCC =5.0V 0.8 0.6 -55
25
125
OUTPUT SINK CURRENT (mA)
SUPPLY VOLTAGE (V) TYPICAL POWER-ON CURRENT vs. SUPPLY VOLTAGE 3.0 DELTA t AA (ns) NORMALIZED IPO 2.5 2.0 1.5 1.0 0.5 0.0 0.0 1.0 2.0 3.0 4.0 5.0 30.0
AMBIENT TEMPERATURE (C) TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 1.25 NORMALIZED ICC
OUTPUT VOLTAGE (V) NORMALIZED I CC vs. CYCLE TIME
25.0 20.0 15.0 10.0 5.0 0.0 0 200 400 600 800 1000 VCC =4.5V TA =25C
1.00
VCC =5.0V TA =25C VIN =0.5V
0.75
0.50 10
20
30
40
SUPPLY VOLTAGE (V)
CAPACITANCE (pF)
CYCLE FREQUENCY (MHz)
Document #: 38-05047 Rev. *C
Page 6 of 8
[+] Feedback
CY7C192
Ordering Information
Speed (ns) 12 15 Ordering Code CY7C192-12VC CY7C192-15VC Package Diagram 51-85031 Package Type 28-Lead Molded SOJ Operating Range Commercial
Package Diagram
28-Lead (300-Mil) Molded SOJ (51-85031)
NOTE : 1. JEDEC STD REF MO088 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.006 in (0.152 mm) PER SIDE 3. DIMENSIONS IN INCHES MIN. MAX.
PIN 1 ID
14 1
DETAIL A EXTERNAL LEAD DESIGN
0.291 0.300
0.330 0.350 0.013 0.019
OPTION 1 OPTION 2
0.026 0.032 0.014 0.020
15
28
0.697 0.713 0.120 0.140 0.050 TYP.
SEATING PLANE
0.007 0.013
0.004
A
0.025 MIN.
0.262 0.272
51-85031-*C
All products and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05047 Rev. *C
Page 7 of 8
(c) Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
[+] Feedback
CY7C192
Document History Page
Document Title: CY7C192 64K x 4 Static RAM with Separate I/O Document Number: 38-05047 REV. ** *A ECN NO. 107149 359716 Issue Date 09/10/01 See ECN Orig. of Change SZV AJU Description of Change Change Spec number from: 38-00076 to 38-05047 Changed Static Discharge Voltage limit in the Maximum Ratings section (page 2) from 2001V to 900V Removed references to CY7C191 Added Pb-free parts to the Ordering Information table and replaced the Package Name column with Package Diagram Removed 20 ns and 25 ns speed bins Changed the Low active power from 220 mW to 55 mW Changed the description of IIX from Input Load Current to Input Leakage Current in DC Electrical Characteristics table Removed IOS parameter from DC Electrical Characteristics table Removed 28-Lead (300-Mil) PDIP package from product offering Updated Ordering Information table
*B *C
419549 492500
See ECN See ECN
AJU NXR
Document #: 38-05047 Rev. *C
Page 8 of 8
[+] Feedback

▲Up To Search▲

Price & Availability of CY7C192-12VC

	To Download CY7C192-12VC Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .